113) Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites.
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作者:Cheng's Research Group
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发布时间 :2024-04-16
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Wang, ZG.; Li, Q.; Xu, HX.; Dahl-Petersen, C.; Yang, Q.; Cheng, DJ.; Cao, DP.; Besenbacher, F.; Lauritsen, J. V.; Helveg, S.; Dong, MD. *, Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites. Nano Energy 2018, 49, 634-643.
https://www.sciencedirect.com/science/article/pii/S2211285518302970
Wang, ZG.; Li, Q.; Xu, HX.; Dahl-Petersen, C.; Yang, Q.; Cheng, DJ.; Cao, DP.; Besenbacher, F.; Lauritsen, J. V.; Helveg, S.; Dong, MD. *, Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites. Nano Energy 2018, 49, 634-643.
https://www.sciencedirect.com/science/article/pii/S2211285518302970
